AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
MRF6P3300HR3 MRF6P3300HR5
7
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
800
16
23
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 32 Vdc
IDQ
= 1600 mA
f = 860 MHz
100
10
21
20
19
18
17
50
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
5
TC
= -30
C
85C
25C
-30C
22
C
60
25
85C
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD
= 24 V
G
ps
, POWER GAIN (dB)
400
16.5
21.5
50
20.5
17.5
100 150 250 300 350200
18
18.5
IDQ
= 1600 mA
f = 860 MHz
32 V
0
19.5
28 V
17
19
20
21
250
107
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
= 32 Vdc, P
out
= 270 W PEP, and
ηD
= 44.1%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
106
105
104
110 130 150 170 190
MTTF (HOURS)
210 230
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